DocumentCode
2659706
Title
Reliability-oriented IGBT selection for high power converters
Author
Jun Wang ; Najmi, Vahid ; Burgos, Rolando ; Boroyevich, Dushan
Author_Institution
Center for Power Electron. Syst., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
fYear
2015
fDate
15-19 March 2015
Firstpage
2500
Lastpage
2503
Abstract
This paper presents a methodology to select IGBT in the reliability-oriented design of high power converters. The failure rate models are presented and the main contributors are analyzed. A review of commercial IGBT chip technologies is conducted, which are used in the later IGBT selections. The reliability models of the power module that includes the IGBTs and other components are built by Markov-Chain Model. Finally, a methodology to conduct the IGBT selection process is developed and illustrated by a given design example, with the goal of the highest power module reliability by selecting the most appropriate IGBTs.
Keywords
Markov processes; failure analysis; insulated gate bipolar transistors; power convertors; semiconductor device reliability; Markov-chain model; commercial chip technologies; failure rate models; high power converters; power module reliability; reliability-oriented IGBT selection; Insulated gate bipolar transistors; Junctions; Multichip modules; Reliability engineering; Stress; Thyristors; High Voltage; IGBT; Markov-Chain Model; Medium Voltage; Reliability-Oriented Design;
fLanguage
English
Publisher
ieee
Conference_Titel
Applied Power Electronics Conference and Exposition (APEC), 2015 IEEE
Conference_Location
Charlotte, NC
Type
conf
DOI
10.1109/APEC.2015.7104701
Filename
7104701
Link To Document