• DocumentCode
    2659706
  • Title

    Reliability-oriented IGBT selection for high power converters

  • Author

    Jun Wang ; Najmi, Vahid ; Burgos, Rolando ; Boroyevich, Dushan

  • Author_Institution
    Center for Power Electron. Syst., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
  • fYear
    2015
  • fDate
    15-19 March 2015
  • Firstpage
    2500
  • Lastpage
    2503
  • Abstract
    This paper presents a methodology to select IGBT in the reliability-oriented design of high power converters. The failure rate models are presented and the main contributors are analyzed. A review of commercial IGBT chip technologies is conducted, which are used in the later IGBT selections. The reliability models of the power module that includes the IGBTs and other components are built by Markov-Chain Model. Finally, a methodology to conduct the IGBT selection process is developed and illustrated by a given design example, with the goal of the highest power module reliability by selecting the most appropriate IGBTs.
  • Keywords
    Markov processes; failure analysis; insulated gate bipolar transistors; power convertors; semiconductor device reliability; Markov-chain model; commercial chip technologies; failure rate models; high power converters; power module reliability; reliability-oriented IGBT selection; Insulated gate bipolar transistors; Junctions; Multichip modules; Reliability engineering; Stress; Thyristors; High Voltage; IGBT; Markov-Chain Model; Medium Voltage; Reliability-Oriented Design;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applied Power Electronics Conference and Exposition (APEC), 2015 IEEE
  • Conference_Location
    Charlotte, NC
  • Type

    conf

  • DOI
    10.1109/APEC.2015.7104701
  • Filename
    7104701