DocumentCode
2659743
Title
A Half-Micron Gate Low Noise GaAs MESFET and Amplifiers
Author
Kodera, H. ; Kaneko, Y. ; Sato, H.
fYear
1977
fDate
21-23 June 1977
Firstpage
277
Lastpage
280
Abstract
A half-micron gate GaAs MESFET is designed and fabricated for the minimum gate parasitics. The single bonding-pad design of the gate and intentional side-etching of the lower layer of the double-layered Schottky-gate satisfy the above requirement. The best noise figure so far measured is 2.5 dB at 10 GHz for the packaged device and 2.1 dB at 12 GHz for the chip device. An X-band unit amplifier is designed for the FET chip. It can be cascaded to get a specified power gain or modified to have a necessary bandwidth.
Keywords
Bandwidth; Bonding; FETs; Gallium arsenide; Low-noise amplifiers; MESFETs; Noise figure; Noise measurement; Packaging; Semiconductor device measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1977 IEEE MTT-S International
Conference_Location
San Diego, CA, USA
Type
conf
DOI
10.1109/MWSYM.1977.1124433
Filename
1124433
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