DocumentCode
2659768
Title
High-Performance Small-Radius Half-Racetrack-Ring-Resonator InAlGaAs Quantum Well Laser Diodes Fabricated via Non-Selective Wet Oxidation
Author
Wang, Jusong ; Liang, Di ; Hall, Douglas C.
Author_Institution
Dept. of Electr. Eng., Notre Dame Univ., IN
fYear
2006
fDate
2006
Firstpage
49
Lastpage
50
Abstract
Utilizing the high index contrast of a deep-etched, non-selectively oxidized AlGaAs/InAlGaAs GRINSCH heterostructure, half-racetrack-ring resonator lasers with peak output powers of 239 mW for a r=25 mum bend radius, and 40 mW for r=8 mum, are demonstrated
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; optical fabrication; oxidation; quantum well lasers; ring lasers; semiconductor heterojunctions; semiconductor quantum wells; 239 mW; 40 mW; AlGaAs-InAlGaAs; GRINSCH heterostructure; deep-etching; half-racetrack-ring resonator lasers; high index contrast; laser fabrication; nonselective wet oxidation; quantum well laser diodes; Chromium; Diode lasers; Laser modes; Optical pulses; Optical waveguides; Oxidation; Plasma applications; Power generation; Silicon compounds; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 2006. Conference Digest. 2006 IEEE 20th International
Conference_Location
Kohala Coast, HI
Print_ISBN
0-7803-9560-3
Type
conf
DOI
10.1109/ISLC.2006.1708080
Filename
1708080
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