Uniform and High-Power Characteristics of AlGaInP-based Laser Diodes by 4-inch Wafer Process Technology for DVD-R/RW/RAM

Author

Sumitomo, H. ; Kajiyama, S. ; Oguri, H. ; Sakashita, T. ; Domoto, S. ; Nakao, K. ; Yamamoto, T. ; Kita, T. ; Komatani, T. ; Kawakubo, H. ; Ono, M. ; Izumi, S.

Author_Institution

Eudyna Devices Inc., Yamanashi

fYear

2006

fDate

2006

Firstpage

53

Lastpage

54

Abstract

In this study, we demonstrate the high-power (over 400 mW) at 75 degC single-lateral-mode operation of a 650-nm band LD, and we present the excellent uniformity of LD characteristics in 4-inch wafer. In summary, we have successfully fabricated high-power and single-lateral-mode 650-nm band AlGaInP LDs by using the 4-inch wafer process technology for the first time. The results confer the promising way to realize the high-speed (over 8times) dual layer recordable DVD systems

Keywords

III-V semiconductors; aluminium compounds; digital versatile discs; gallium compounds; indium compounds; laser beams; optical fabrication; random-access storage; semiconductor lasers; thermo-optical effects; write-once storage; 650 nm; 75 C; AlGaInP; dual layer recordable DVD systems; laser diodes characteristics; optical fabrication; single-lateral-mode operation; wafer process technology; Costs; DVD; Diode lasers; Electrons; Optical devices; Optical recording; Power generation; Temperature dependence; Thermal resistance; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 2006. Conference Digest. 2006 IEEE 20th International

Conference_Location

Kohala Coast, HI

Print_ISBN

0-7803-9560-3

Type

conf

DOI

10.1109/ISLC.2006.1708082

Filename

1708082