Modeling the thermal behavior of chalcogenide based phase change memory cell

Author

Devasia, Archana ; Kurinec, Santosh

Author_Institution

Rochester Inst. of Technol., Rochester

fYear

2007

fDate

12-14 Dec. 2007

Firstpage

1

Lastpage

2

Abstract

The presented work, reports a 2D thermal model for a PCM cell employing stacked Ge-chalcogenide (Ge₂Se₃) and Sn-chalcogenide (SnSe) layers as phase change materials. The thermal behavior exhibited by the PCM cell upon melting of the Ge₂Se₃ layer is explored at the 130nm, 65nm and 45nm technology nodes. The suitability of doped polysilicon, TiN and TaSiN_x as potential heater materials with the purpose of reducing programming current below 1 mA is examined. Possibility of thermal crosstalk between adjacent cells driven by MOSFETs, is also investigated.

Keywords

germanium compounds; phase change materials; semiconductor storage; tantalum compounds; thermal analysis; tin compounds; titanium compounds; Ge₂Se₃; MOSFET; SnSe; TaSiN; TiN; chalcogenide based phase change memory cell; doped polysilicon; size 130 mum; size 45 mum; size 65 mum; thermal behavior; thermal crosstalk; CMOS technology; Conductivity; Crosstalk; Doping; Equations; Nonvolatile memory; Paper technology; Phase change materials; Phase change memory; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2007 International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-1891-6

Electronic_ISBN

978-1-4244-1892-3

Type

conf

DOI

10.1109/ISDRS.2007.4422431

Filename

4422431