DocumentCode
2659913
Title
GaInNAs DFB Laser with Buried GaAs Grating
Author
Hashimoto, Jun-ichi ; Koyama, Kenji ; Ishizuka, Takashi ; Tsuji, Yukihiro ; Fujii, Kousuke ; Yamada, Takashi ; Katsuyama, Tsukuru
Author_Institution
Optoelectron. Ind. & Technol. Dev. Assoc., Yokohama
fYear
2006
fDate
2006
Firstpage
57
Lastpage
58
Abstract
We for the first time fabricated a GaInNAs DFB laser having a buried GaAs grating in the center current injection region. A successful DFB laser oscillation with the threshold current of 34 mA was obtained
Keywords
III-V semiconductors; diffraction gratings; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser beams; optical fabrication; semiconductor lasers; 34 mA; DFB laser; GaAs; GaInNAs; buried GaAs grating; center current injection region; laser oscillation; optical fabrication; Distributed feedback devices; Etching; Gallium arsenide; Gratings; Laser feedback; Optical coupling; Optical materials; Temperature; Textile industry; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 2006. Conference Digest. 2006 IEEE 20th International
Conference_Location
Kohala Coast, HI
Print_ISBN
0-7803-9560-3
Type
conf
DOI
10.1109/ISLC.2006.1708084
Filename
1708084
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