DocumentCode
2659987
Title
Ultrathin MBE-Grown AlN/GaN HEMTs with record high current densities
Author
Cao, Yijia ; Deen, David ; Simon, Jerome ; Bean, J. ; Su, Naifang ; Zhang, Juyong ; Fay, Patrick ; Xing, Hao ; Jena, D.
Author_Institution
Notre Dame Univ., Notre Dame
fYear
2007
fDate
12-14 Dec. 2007
Firstpage
1
Lastpage
2
Abstract
III-V nitride-based HEMT technology has made rapid progress over the last decade. Benefiting from the extremely high polarization charge, in this work, we demonstrate record high DC current density (2.9 A/mm) and very high extrinsic transconductance (~430 mS/mm) AIN/GaN HEMTs.
Keywords
III-V semiconductors; aluminium compounds; current density; gallium compounds; high electron mobility transistors; molecular beam epitaxial growth; AlN-GaN; DC current density; III-V nitride-based HEMT technology; high extrinsic transconductance; record high current densities; ultrathin MBE-grown HEMT; Aluminum gallium nitride; Current density; Educational institutions; Gallium nitride; HEMTs; Heterojunctions; III-V semiconductor materials; MODFETs; Polarization; Scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2007 International
Conference_Location
College Park, MD
Print_ISBN
978-1-4244-1892-3
Electronic_ISBN
978-1-4244-1892-3
Type
conf
DOI
10.1109/ISDRS.2007.4422436
Filename
4422436
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