Title :
Advanced semiconductor on insulator substrates for LP and HP digital CMOS applications
Author :
Nguyen, Bich-yen ; Celler, George ; Cayrefourcq, Ian ; Patruno, Paul ; Mazure, Carlos
Author_Institution :
Parc Technologique des Fontaines, Crolles
Abstract :
To meet HP and LP circuit requirements, increasing channel mobility is required to boost transistor performance and/or reduce Vdd for lower power dissipation without performance penalty. The ultra-thin body (UTB) devices with undoped and strained channels can be used to control the SCE and reduce the sub-threshold leakage for scaling and low power dissipation. Implementing strained-silicon is not just a substrate change; strained- Si will require much more extensive work as transistor scaling continues.
Keywords :
CMOS integrated circuits; carrier mobility; low-power electronics; semiconductor devices; silicon-on-insulator; CMOS integrated circuit; SOI; channel mobility; high power circuit requirements; low power circuit requirements; transistor performance; transistor scaling; ultra-thin body devices; CMOS technology; Capacitive sensors; Germanium silicon alloys; Insulation; MOS devices; MOSFETs; Silicon germanium; Substrates; Tensile stress; Uniaxial strain;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422440
