Title :
High-Power Single Mode InGaAs Sub-Monolayer Quantum-Dot Photonic-Crystal VCSELs
Author :
Yang, H. P D ; Hsiao, R.S. ; Lin, G. ; Chi, J.Y. ; Hsu, I.C. ; Lai, Fang-I ; Kuo, H.C. ; Maleev, N.A. ; Blokhin, S.A.
Author_Institution :
Nanophotonic Center, Ind. Technol. Res. Inst., Hsinchu
Abstract :
An InGaAs sub-monolayer (SML) quantum dot photonic crystal vertical-cavity surface-emitting laser (QD PhC-VCSEL) for fiber-optic applications is first demonstrated. Single fundamental mode CW output power of 3.8 mW has been achieved in the 990 nm range, with a threshold current of 1 mA. SMSR larger than 35 dB has been observed over entire operation range
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser beam applications; laser beams; laser modes; photonic crystals; quantum dot lasers; surface emitting lasers; 1 mA; 3.8 mW; 990 nm; CW output power; InGaAs; VCSEL; fiber-optic applications; photonic-crystal laser; single mode laser; sub-monolayer quantum-dot laser; vertical-cavity surface-emitting laser; Fiber lasers; Indium gallium arsenide; Laser modes; Photonic crystals; Power generation; Quantum dot lasers; Quantum dots; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Semiconductor Laser Conference, 2006. Conference Digest. 2006 IEEE 20th International
Conference_Location :
Kohala Coast, HI
Print_ISBN :
0-7803-9560-3
DOI :
10.1109/ISLC.2006.1708091
