Design and optimization of the SOI field effect diode (FED)

This article deals with the importance of the structure of FED, that lies in the fact that by appropriately biasing it, its operation can be switched between SCR-like and diode-like. For devices with p-type body doping the depletion of electrons beneath G1 imposes an upper limit to the breakdown voltage. This paper proposes to use n-type body doping instead to achieve high breakdown voltage and reduce the gate length for higher turn-on speed and lower on-resistance.