• DocumentCode
    2660143
  • Title

    Screening of Piezoelectric Fields in InGaN Quantum Well Laser Structures

  • Author

    Brown, Iain H. ; Blood, Peter ; Smowton, Peter M. ; Thomson, John D. ; Olaizola, Santiago M. ; Fox, A. Mark ; Parbrook, Peter J. ; Chow, Weng W.

  • Author_Institution
    Sch. of Phys. & Astron., Cardiff Univ.
  • fYear
    0
  • fDate
    0-0 0
  • Firstpage
    81
  • Lastpage
    82
  • Abstract
    By modelling time resolved emission spectra of 3 and 4 nm In0.07Ga0.93N quantum wells we show that injected carriers reduce the internal field to only 70% of its unscreened value at typical laser thresholds
  • Keywords
    III-V semiconductors; carrier density; gallium compounds; indium compounds; laser beams; piezoelectricity; quantum well lasers; semiconductor quantum wells; time resolved spectra; 3 nm; 4 nm; InGaN; carrier density; carrier injection; laser behaviour; laser threshold; piezoelectric fields; quantum well laser structures; time resolved emission spectra; Astronomy; Charge carrier density; Gallium nitride; Laser theory; Light emitting diodes; Optical buffering; Optical pulses; Physics; Quantum well lasers; Radiative recombination;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference, 2006. Conference Digest. 2006 IEEE 20th International
  • Conference_Location
    Kohala Coast, HI
  • Print_ISBN
    0-7803-9560-3
  • Type

    conf

  • DOI
    10.1109/ISLC.2006.1708096
  • Filename
    1708096
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2660143