Title :
Lasing at ~1.3 μm from InAs Quantum Dots with GaInNAs Embedding Layers Grown by Metalorganic Chemical Vapor Deposition
Author :
Hashimoto, R. ; Kushibe, M. ; Ezaki, M. ; Hatakoshi, G. ; Nishioka, M. ; Arakawa, Y.
Author_Institution :
Nanoelectron. Collaborative Res. Center, Tokyo Univ.
Abstract :
Self-assembled InAs quantum dot (QD) lasers emitting at 1.29 mum on GaAs substrates grown by metalorganic chemical vapor deposition (MOCVD) were achieved by using GaInNAs embedding layers. This emission wavelength is the longest wavelength ever reported for QD lasers grown by MOCVD
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; indium compounds; laser beams; nitrogen compounds; quantum dot lasers; ridge waveguides; self-assembly; waveguide lasers; 1.29 micron; GaAs; GaAs substrates; GaInNAs; GaInNAs embedding layers; InAs; MOCVD; QD lasers; metalorganic chemical vapor deposition; ridge waveguide laser performance; self-assembled InAs quantum dot laser; Chemical lasers; Chemical vapor deposition; Gallium arsenide; MOCVD; Quantum dot lasers; Quantum dots; Research and development; Semiconductor lasers; Substrates; US Department of Transportation;
Conference_Titel :
Semiconductor Laser Conference, 2006. Conference Digest. 2006 IEEE 20th International
Conference_Location :
Kohala Coast, HI
Print_ISBN :
0-7803-9560-3
DOI :
10.1109/ISLC.2006.1708099
