Ultraviolet reflectance of room temperatures nitrogen implanted silicon [SOI]

Summary form only given. The determination of the surface roughness parameters of nitrogen-implanted silicon for an implant temperature of less than 300°C is discussed. These wafers were implanted to a dose of 8×10¹⁷ cm^-2 at an energy of 150 keV, annealed at 1100°C, and characterized with a UV-VIS spectrophotometer in the 200-2600 nm wavelength range by measuring the specular reflectance at a 5° angle of incidence. The effects of surface roughness on the reflectance of an unimplanted silicon wafer and a wafer damaged by ion implantation with light ions have been simulated. A comparison of these results to that of the calculated reflectance of implanted silicon and material with a silicon-dioxide surface layer is presented to explain the observed UV-reflectance curves of the SOI material implanted at a low temperature