Title :
Temperature dependent empirical modeling of proximity diffused Si esaki diodes and memory circuits
Author :
Pawlik, D.J. ; Muhkerjee, S. ; Krom, R. ; Pandharpure, S. ; Kurinec, S.K. ; Anisha, R. ; Berger, P.R. ; Rommel, S.L.
Author_Institution :
Dept. of Microelectron. Eng., Rochester
Abstract :
In this paper, the modified Sze model developed by the authors fits the measured IV characteristics very well for both forward and reverse biases at temperatures ranging from 23degC up to 200degC. Simulations of a TSRAM timing diagrams at multiple temperatures show the viability of using the developed model for accurate simulation and characterization of tunnel diode augmented CMOS circuits, including temperature effects.
Keywords :
CMOS integrated circuits; SRAM chips; elemental semiconductors; semiconductor device models; silicon; tunnel diodes; CMOS circuits; IV characteristics; Si; TSRAM timing diagrams; memory circuits; modified Sze model; proximity diffused Si Esaki diodes; temperature dependent empirical modeling; temperature effects; tunnel diode; Circuits; Educational institutions; Germanium silicon alloys; Resonance; Resonant tunneling devices; Semiconductor device modeling; Semiconductor diodes; Semiconductor process modeling; Silicon germanium; Temperature dependence;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1891-6
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422455
