DocumentCode

2660333

Title

Physics based current and capacitance modeling of short-channel double gate MOSFETs

Author

Børli, Håkon ; Kolberg, Sigbjørn ; Fjeldly, Tor A.

Author_Institution

Department of Electronics and Telecommunications, Norwegian University of Science and Technology, UniK - University Graduate Center, Kjeller, Norway

fYear

2007

fDate

12-14 Dec. 2007

Firstpage

1

Lastpage

2

Keywords

Capacitance; Conformal mapping; Educational institutions; Electrodes; Electrostatics; MOSFETs; Numerical simulation; Physics; Solid modeling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2007 International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-1892-3

Electronic_ISBN

978-1-4244-1892-3

Type

conf

DOI

10.1109/ISDRS.2007.4422456

Filename

4422456