DocumentCode
2660430
Title
High Power Ultraviolet VECSEL through Intra-Cavity Frequency-Doubling in BBO
Author
Hastie, Jennifer E. ; Morton, Lynne G. ; Kemp, Alan J. ; Dawson, Martin D. ; Krysa, Andrey B. ; Roberts, John S.
Author_Institution
Inst. of Photonics, Strathclyde Univ., Glasgow
fYear
0
fDate
0-0 0
Firstpage
109
Lastpage
110
Abstract
Intra-cavity frequency-doubling in a beta-barium borate crystal has generated a total of 120 mW continuous-wave output power at 338 nm from a vertical-external-cavity surface-emitting laser based on the AlGaInP material system. The wavelength was tuned over 5 nm
Keywords
III-V semiconductors; aluminium compounds; barium compounds; gallium compounds; indium compounds; laser cavity resonators; laser tuning; optical harmonic generation; optical materials; semiconductor lasers; surface emitting lasers; 120 mW; 338 nm; AlGaInP; BBO; BaB2O4; beta-barium borate crystal; intra-cavity frequency-doubling; laser material; ultraviolet VECSEL; vertical-external-cavity surface-emitting laser; Frequency; III-V semiconductor materials; Laser beams; Laser tuning; Mirrors; Power generation; Power lasers; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 2006. Conference Digest. 2006 IEEE 20th International
Conference_Location
Kohala Coast, HI
Print_ISBN
0-7803-9560-3
Type
conf
DOI
10.1109/ISLC.2006.1708110
Filename
1708110
Link To Document