DocumentCode
2660471
Title
InP-based VCSELs with Buried Tunnel Junction for Optical Communication and Sensing in the 1.3-2.3 μm Wavelength Range
Author
Ortsiefer, M. ; Grau, M. ; Rosskopf, J. ; Shau, R. ; Windhorn, K. ; Rönneberg, E. ; Böhm, G. ; Hofmann, W. ; Dier, O. ; Amann, M.-C.
Author_Institution
VERTILAS GmbH, Garching
fYear
0
fDate
0-0 0
Firstpage
113
Lastpage
114
Abstract
In this paper, we present recent progress on high-performance InP-based long-wavelength VCSELs such as 1.3 or 1.55 mum incorporating a buried tunnel junction (BTJ) for applications in optical communication and sensing
Keywords
III-V semiconductors; indium compounds; laser cavity resonators; optical communication equipment; optical sensors; semiconductor lasers; surface emitting lasers; tunnelling; 1.3 to 2.3 micron; InP; VCSEL; buried tunnel junction; optical communication; optical sensor; vertical-cavity surface-emitting lasers; Conducting materials; Optical fiber communication; Optical materials; Power generation; Surface emitting lasers; Temperature; Thermal conductivity; Threshold current; Threshold voltage; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 2006. Conference Digest. 2006 IEEE 20th International
Conference_Location
Kohala Coast, HI
Print_ISBN
0-7803-9560-3
Type
conf
DOI
10.1109/ISLC.2006.1708112
Filename
1708112
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