• DocumentCode
    2660489
  • Title

    Simplified Si resonant interband tunnel diodes

  • Author

    Thompson, Phillip E. ; Jernigan, Glenn G. ; Park, Si-Young ; Yu, Ronghua ; Anisha, R. ; Berger, Paul R. ; Pawlik, David ; Krom, Raymond ; Rommel, Sean L.

  • Author_Institution
    Naval Res. Lab., Washington
  • fYear
    2007
  • fDate
    12-14 Dec. 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    A driving force in electronic device research has been increased functionality with reduced energy loss. One of the techniques proposed for meeting these goals has been the employment of tunnel diodes integrated with conventional transistors to form logic and memory circuits. Considerable progress has been made in the area of Si-based resonant interband tunnel diodes (RITD).
  • Keywords
    elemental semiconductors; silicon; tunnel diodes; Si; electronic device; energy loss reduction; logic circuits; memory circuits; resonant interband tunnel diodes; Annealing; Doping; Heterojunction bipolar transistors; Logic circuits; Power engineering and energy; Resonance; Semiconductor diodes; Substrates; Surface resistance; Temperature sensors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2007 International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-1892-3
  • Electronic_ISBN
    978-1-4244-1892-3
  • Type

    conf

  • DOI
    10.1109/ISDRS.2007.4422467
  • Filename
    4422467
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2660489