DocumentCode
2660530
Title
Single Mode 1.28 μm InGaAs VCSELs using an Inverted Surface Relief
Author
Söderberg, E. ; Modh, P. ; Gustavsson, J.S. ; Larsson, A. ; Zhang, Z.Z. ; Berggren, J. ; Hammar, M.
Author_Institution
Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Goteborg
fYear
0
fDate
0-0 0
Firstpage
123
Lastpage
124
Abstract
High performance 1.28 mum InGaAs single mode VCSELs have been fabricated using an inverted surface relief to relax critical fabrication tolerances. Higher order mode suppression >30 dB and 10 Gbps modulation are demonstrated up to 85degC
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser modes; optical fabrication; optical modulation; semiconductor lasers; surface emitting lasers; 1.28 micron; 10 Gbit/s; 85 C; InGaAs; critical fabrication tolerances; higher order mode suppression; inverted surface relief; laser fabrication; optical modulation; single mode VCSEL; Apertures; Etching; Gallium arsenide; Indium gallium arsenide; Mirrors; Optical device fabrication; Power generation; Resonance; Surface resistance; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 2006. Conference Digest. 2006 IEEE 20th International
Conference_Location
Kohala Coast, HI
Print_ISBN
0-7803-9560-3
Type
conf
DOI
10.1109/ISLC.2006.1708117
Filename
1708117
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