• DocumentCode
    2660564
  • Title

    Low Thermal Resistance, Low Current Density, High-Speed 980 and 850nm VCSELs

  • Author

    Al-Omari, A.N. ; Carey, G.P. ; Hallstein, S. ; Watson, J.P. ; Dang, G. ; Lear, K.L.

  • Author_Institution
    Colorado State Univ., Fort Collins, CO
  • fYear
    0
  • fDate
    0-0 0
  • Firstpage
    127
  • Lastpage
    128
  • Abstract
    Copper plated, vertical cavity surface emitting lasers fabricated from AlGaAs structures, with thermal resistance up to 50% less than previously published values exhibit increased power, modulation current efficiency factor (MCEF), and maximum modulation bandwidth including 18 GHz at 8 kA/cm2
  • Keywords
    III-V semiconductors; aluminium compounds; copper; gallium arsenide; laser beams; optical modulation; semiconductor lasers; surface emitting lasers; thermal resistance; 18 GHz; 850 nm; 980 nm; AlGaAs; Cu; VCSEL; copper plated vertical cavity surface emitting lasers; current density; high-speed lasers; modulation bandwidth; modulation current efficiency factor; thermal resistance; Apertures; Bandwidth; Copper; Current density; Heat sinks; Resistance heating; Surface emitting lasers; Surface resistance; Thermal resistance; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference, 2006. Conference Digest. 2006 IEEE 20th International
  • Conference_Location
    Kohala Coast, HI
  • Print_ISBN
    0-7803-9560-3
  • Type

    conf

  • DOI
    10.1109/ISLC.2006.1708119
  • Filename
    1708119
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2660564