DocumentCode
2660585
Title
Short-Cavity 980 nm DBR Lasers with Quantum Well Intermixed Integrated High-Speed EA Modulators
Author
Wang, Chad S. ; Chang, Yu-Chia ; Raring, James W. ; Coldren, Larry A.
Author_Institution
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA
fYear
0
fDate
0-0 0
Firstpage
129
Lastpage
130
Abstract
Short-cavity, 980 nm DBR lasers with integrated EAMs were designed and fabricated using a quantum well intermixing processing platform in the InGaAs/GaAs/AlGaAs material system. RF bandwidths of 16 GHz were achieved and open eyes at 10 Gb/s were observed with >7dB dynamic extinction
Keywords
aluminium compounds; distributed Bragg reflector lasers; electro-optical modulation; electroabsorption; gallium arsenide; high-speed optical techniques; indium compounds; quantum well lasers; 10 Gbits/s; 16 GHz; 980 nm; InGaAs-GaAs-AlGaAs; RF bandwidths; dynamic extinction; integrated high-speed electro-absorption modulators; quantum well intermixing integration platform; short-cavity DBR lasers; Bandwidth; Distributed Bragg reflectors; Gallium arsenide; Optical design; Optical materials; Power generation; Power lasers; Quantum well lasers; Radio frequency; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 2006. Conference Digest. 2006 IEEE 20th International
Conference_Location
Kohala Coast, HI
Print_ISBN
0-7803-9560-3
Type
conf
DOI
10.1109/ISLC.2006.1708120
Filename
1708120
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