DocumentCode
2660611
Title
Efficient simulation of hole transport in strained Si and SiGe on insulator inversion layers
Author
Pham, A.T. ; Jungemann, C. ; Klawitter, M. ; Menerzhagen, B.
Author_Institution
Tech. Univ. Braunschweig, Braunschweig
fYear
2007
fDate
12-14 Dec. 2007
Firstpage
1
Lastpage
2
Abstract
Low and high field transport of holes in strained SiGe on insulator inversion layers is studied by solving BTE with a new accurate and efficient non-stochastic method for the first time. Alloy scattering is found to have a strong impact on hole transport. Strain enhances both the low-field mobility and the high-field drift velocity.
Keywords
Boltzmann equation; Ge-Si alloys; carrier mobility; inversion layers; semiconductor materials; silicon-on-insulator; BTE; Boltzmann transport equation; Si; SiGe; alloy scattering; high-field drift velocity; hole transport; inversion layers; low-field mobility; nonstochastic method; silicon germaniun on insulator; silicon on insulator; Distribution functions; Educational institutions; Electron mobility; Germanium silicon alloys; Insulation; MOSFETs; Phonons; Scattering; Silicon germanium; Uniaxial strain;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2007 International
Conference_Location
College Park, MD
Print_ISBN
978-1-4244-1892-3
Electronic_ISBN
978-1-4244-1892-3
Type
conf
DOI
10.1109/ISDRS.2007.4422476
Filename
4422476
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