Title :
Electrically Injected InGaAsP Microdisk Lasers Heterogeneously Integrated on a Si-Wafer
Author :
Van Campenhout, J. ; Rojo-Romeo, P. ; Van Thourhout, Dries ; Seassal, Christian ; Regreny, P. ; Di Cioccio, L. ; Fedeli, J.M. ; Baets, Roel
Author_Institution :
Dept. of Inf. Technol., Ghent Univ.
Abstract :
We report on electrically pumped lasing in microdisk cavities etched in a thin InP-based membrane directly bonded on top of a silicon wafer. The microdisks were planarized by means of a benzocyclobutene (BCB) layer, into which contact windows were etched to perform current injection. The top metal contact is placed only in the centre of the disk, whereas the bottom contacting is done by means of a thin lateral InP contacting layer. In order to avoid large optical absorption in p-type contact layers, a tunnel junction was used in combination with two n-type contacts. Lasing was observed in pulsed regime at room temperature with current thresholds in the range 0.55-1.1 mA, for microdisks with a diameter in the range 6-9 mum
Keywords :
III-V semiconductors; elemental semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; laser cavity resonators; microdisc lasers; optical interconnections; organic compounds; semiconductor lasers; silicon; 0.55 to 1.1 mA; 6 to 9 micron; InGaAsP; Si; benzocyclobutene layer; current injection; electrically injected microdisk lasers; electrically pumped lasing; heterogeneous integration; microdisk cavities; n-type contacts; optical absorption; optical interconnect; p-type contact layers; semiconductor laser; silicon wafer; thin lateral InP contacting layer; tunnel junction; Absorption; Biomembranes; Contacts; Etching; Indium phosphide; Optical pulses; Optical pumping; Pump lasers; Silicon; Wafer bonding;
Conference_Titel :
Semiconductor Laser Conference, 2006. Conference Digest. 2006 IEEE 20th International
Conference_Location :
Kohala Coast, HI
Print_ISBN :
0-7803-9560-3
DOI :
10.1109/ISLC.2006.1708122
