Title :
Quantum Dot Modelocked and Broad-Band Lasers for Optical Interconnect Solutions
Author :
Kovsh, A. ; Gubenko, A. ; Krestnikov, I. ; Livshits, D. ; Mikhrin, S. ; Zhukov, A. ; Portnoi, E.
Author_Institution :
NL Nanosemicond. GmbH, Dortmund
Abstract :
Quantum-dot lasers demonstrate broadband (20 nm) emission spectra and high spectral power densities (>20 mW/nm). Monolithic mode-locked InAs/InGaAs quantum-dot lasers operate at 5 GHz with a peak power of 1.7 W and a pulse width of 3.2 ps
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser beams; laser mode locking; optical interconnections; quantum dot lasers; 1.7 W; 20 nm; 3.2 ps; 5 GHz; InAs-InGaAs; broad-band lasers; broadband emission spectra; monolithic mode-locked lasers; optical interconnect; quantum dot lasers; spectral power densities; Bandwidth; Laser mode locking; Laser modes; Optical interconnections; Optical resonators; Power generation; Quantum dot lasers; Stimulated emission; US Department of Transportation; Waveguide lasers;
Conference_Titel :
Semiconductor Laser Conference, 2006. Conference Digest. 2006 IEEE 20th International
Conference_Location :
Kohala Coast, HI
Print_ISBN :
0-7803-9560-3
DOI :
10.1109/ISLC.2006.1708129
