High temperature high field numerical modeling and experimental characterization of 4H-SiC MOSFETs

We present detailed numerical models and experimental characterization of the performance and the physics of operation of 4H-SiC MOSFETs at high fields and high temperature. We extract the physics of the interface trap distribution at high temperatures by comparing ID-VG simulations to experiment. We observe a spreading of the interface trap density of states near the conduction band edge with increase in temperature. This coupled with the reduction in trap occupation probability at high temperatures gives a complex relationship of occupied trap density and temperature. We also see an increase in current with temperature for 4H-SiC MOSFETs.