Title :
Single charge detection using single-walled carbon nanotube single-hole transistor
Author :
Kamimura, Takafumi ; Ohno, Yasuhide ; Matsumoto, Kazuhiko
Author_Institution :
Osaka Univ., Osaka
Abstract :
By using the single hole transistor (SHT), we have succeeded in detecting the single charge transition near the channel of single-walled carbon nanotube (SWNT). Abrupt discrete switching of the source-drain current is observed in the electrical measurements of SWNT SHT. These random telegraph signals (RTS) are attributed to fluctuating charge traps near the SWNT SHT conduction channels. The current-switching behavior associated with the occupancy of individual charge traps is analyzed statistically.
Keywords :
carbon nanotubes; semiconductor device models; transistors; abrupt discrete switching; current switching behavior; individual charge traps; random telegraph signals; single charge detection; single hole transistor; single walled carbon nanotube; source drain current; Carbon nanotubes; Current measurement; Educational institutions; Hysteresis; Interference; Probability; Silicon compounds; Substrates; Transistors; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422494
