Title :
Dynamic C-V and G-V characteristics of metal-insulator-semiconductor capacitor with Au nanocrystals and high-K tunneling layer
Author :
Chiang, K.H. ; Wu, H.C. ; Chen, P.S. ; Kuan, C.H. ; Tsai, C.S.
Author_Institution :
Nat. Taiwan Univ., Taipei
Abstract :
The charge storage and dynamic characteristics in a metal-insulator-semiconductor (MIS) capacitor with Au nanocrystals (NCs) using capacitance-voltage and conductance-voltage measurements are investigated. the HfSiO2 stacked structure embedded with Au NCs has been demonstrated for application in memory devices. The high frequency C-V shows the significant charge storage resulted in hysteresis characteristics. In order to advance analyze the trap induced admittance and charge exchange effect in these samples, we will utilize single energy level trap model to extract the trap conductance.
Keywords :
MIS capacitors; charge exchange; dielectric hysteresis; energy states; gold; hafnium compounds; high-k dielectric thin films; silicon compounds; HfSiO2-Au; MIS capacitor; charge exchange effect; charge storage; conductance-voltage characteristics; current-voltage characteristics; dynamic characteristics; energy level trap model; high-k tunneling layer; hysteresis characteristics; metal-insulator-semiconductor capacitor; nanocrystals; trap induced admittance; Capacitance measurement; Capacitance-voltage characteristics; Capacitors; Current measurement; Gold; High K dielectric materials; High-K gate dielectrics; Metal-insulator structures; Nanocrystals; Tunneling;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422495
