DocumentCode
2660944
Title
High-Index-Contrast Oxide-Confined GaAsP/InGaAsN Multi-Quantum-Well Ridge Waveguide Lasers
Author
Liang, Di ; Hall, Douglas C. ; Huang, Juno Yu-Ting ; Yeh, Jeng-Ya ; Mawst, Luke J.
Author_Institution
Dept. of Electr. Eng., Notre Dame Univ., IN
fYear
0
fDate
0-0 0
Firstpage
165
Lastpage
166
Abstract
A modified wet thermal process is used to oxidize both GaAs waveguide and GaAsP/InGaAsN MQW layers of deeply-etched ridge waveguide lasers, providing up to a 2.3 times threshold reduction and strong index-guiding for kink-free operation
Keywords
III-V semiconductors; arsenic compounds; etching; gallium arsenide; gallium compounds; indium compounds; laser beams; quantum well lasers; ridge waveguides; thermal analysis; waveguide lasers; GaAsP-InGaAsN; etching; high-index-contrast laser; kink-free operation; oxide-confined multi-quantum-well ridge waveguide lasers; wet thermal process; Etching; Gallium arsenide; Optical pulses; Optical waveguides; Oxidation; Quantum well devices; Ring lasers; Scanning electron microscopy; Semiconductor lasers; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 2006. Conference Digest. 2006 IEEE 20th International
Conference_Location
Kohala Coast, HI
Print_ISBN
0-7803-9560-3
Type
conf
DOI
10.1109/ISLC.2006.1708138
Filename
1708138
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