DocumentCode
2660998
Title
A novel gated transmission line method for organic thin film transistors
Author
Jung, Keum-Dong ; Kim, Byeong-Ju ; Kim, Yoo Chul ; Park, Byung-Gook ; Shin, Hyungcheol ; Lee, Jong Duk
Author_Institution
Seoul Nat. Univ., Seoul
fYear
2007
fDate
12-14 Dec. 2007
Firstpage
1
Lastpage
2
Abstract
Gated transmission line method (gated TLM) has been widely used to analyze the series resistance (Rsd) of organic thin film transistors (OTFTs). However, for organic thin film transistors (OTFTs), usually the crossing points at the second quadrant do not meet at one point, so it is hard to determine the coefficients. On the highly doped silicon substrate, 35 nm-thick thermal oxide and 10 nm-thick dilute PMMA make the insulator.
Keywords
thin film transistors; transmission line theory; OTFT; gated transmission line method; organic thin film transistor; series resistance; Educational institutions; Electric resistance; Insulation; Organic thin film transistors; Pentacene; Silicon; Substrates; Thin film transistors; Transmission lines; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2007 International
Conference_Location
College Park, MD
Print_ISBN
978-1-4244-1892-3
Electronic_ISBN
978-1-4244-1892-3
Type
conf
DOI
10.1109/ISDRS.2007.4422501
Filename
4422501
Link To Document