Title :
A novel gated transmission line method for organic thin film transistors
Author :
Jung, Keum-Dong ; Kim, Byeong-Ju ; Kim, Yoo Chul ; Park, Byung-Gook ; Shin, Hyungcheol ; Lee, Jong Duk
Author_Institution :
Seoul Nat. Univ., Seoul
Abstract :
Gated transmission line method (gated TLM) has been widely used to analyze the series resistance (Rsd) of organic thin film transistors (OTFTs). However, for organic thin film transistors (OTFTs), usually the crossing points at the second quadrant do not meet at one point, so it is hard to determine the coefficients. On the highly doped silicon substrate, 35 nm-thick thermal oxide and 10 nm-thick dilute PMMA make the insulator.
Keywords :
thin film transistors; transmission line theory; OTFT; gated transmission line method; organic thin film transistor; series resistance; Educational institutions; Electric resistance; Insulation; Organic thin film transistors; Pentacene; Silicon; Substrates; Thin film transistors; Transmission lines; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422501
