Evanescent field sensor using silicon-on-insulator photonic wires

Author

Densmore, A. ; Xu, D.X. ; Waldron, P. ; Janz, S. ; Lapointe, J. ; Cheben, P. ; Delage, A. ; Lamontagne, B. ; Schmid, J.H. ; Post, E.

Author_Institution

Inst. for Microstruct. Sci., Nat. Res. Council of Canada, Ottawa, Ont.

fYear

2006

fDate

13-15 Sept. 2006

Firstpage

1

Lastpage

3

Abstract

A silicon-on-insulator based evanescent field sensor using silicon photonic wire waveguides is reported. The unique properties of high index contrast, submicron structures are exploited to enhance electric field magnitude and localization near the sensor surface. The evanescent field sensor is demonstrated in a Mach Zehnder configuration.

Keywords

Mach-Zehnder interferometers; integrated optics; micro-optomechanical devices; microsensors; optical materials; optical sensors; optical waveguides; photonic crystals; silicon-on-insulator; Mach Zehnder interferometer; Si-SiO₂; evanescent field sensor; high-index contrast; localized electric field distributions; silicon-on-insulator photonic wire waveguides; submicron structures; Biological materials; Biosensors; Chemical and biological sensors; Optical surface waves; Optical waveguides; Optoelectronic and photonic sensors; Sensor arrays; Sensor phenomena and characterization; Silicon on insulator technology; Waveguide theory;

fLanguage

English

Publisher

ieee

Conference_Titel

Group IV Photonics, 2006. 3rd IEEE International Conference on

Conference_Location

Ottawa, Ont.

Print_ISBN

1-4244-0096-1

Type

conf

DOI

10.1109/GROUP4.2006.1708145

Filename

1708145