DocumentCode
2661127
Title
Milliwatt THz ouptut power from a photoconductive switch
Author
Brown, E.R.
Author_Institution
P.O. Box 1574, La Canada, CA 91012, USA
fYear
2007
fDate
12-14 Dec. 2007
Firstpage
1
Lastpage
2
Abstract
This paper reports a recent switch design that produces milliwatt average power level into free space when pumped by a modest fiber mode-locked laser at ~780 nm. The present PC switch design is based on ultrafast epitaxial GaAs with embedded ErAs nanoparticles grown by molecular beam epitaxy at standard temperatures (>500 degC). The ErAs nanoparticles play a similar role to the arsenic precipitates in low-temperature-grown ultrafast GaAs.
Keywords
III-V semiconductors; erbium compounds; gallium arsenide; gallium compounds; laser mode locking; molecular beam epitaxial growth; nanoparticles; photoconducting switches; ErAs; GaAs; PC switch design; arsenic precipitates; fiber mode-locked laser; free space; milliwatt THz ouptut power; molecular beam epitaxy; nanoparticles; photoconductive switch; Fiber lasers; Gallium arsenide; Laser excitation; Laser mode locking; Nanoparticles; Optical design; Photoconductivity; Power lasers; Pump lasers; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2007 International
Conference_Location
College Park, MD
Print_ISBN
978-1-4244-1892-3
Electronic_ISBN
978-1-4244-1892-3
Type
conf
DOI
10.1109/ISDRS.2007.4422509
Filename
4422509
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