Title :
Gallium nitride nanowire devices - fabrication, characterization, and transport properties
Author :
Motayed, A. ; Davydov, A.V. ; Mohammad, S.N. ; Melngailis, J.
Author_Institution :
Nat. Inst. of Stand. & Technol., Gaithersburg
Abstract :
Gallium nitride nanowires offer a great deal of potential as they poses unique material properties like wide direct bandgaps, radiation hardness, mechanical and chemical stability. We have demonstrated nanoscale devices made from GaN nanowires utilizing only conventional batch microfabrication techniques. Nanowires were dielectrophoreticaly aligned to achieve large number of reliable devices.
Keywords :
II-VI semiconductors; gallium compounds; nanowires; gallium nitride nanowire device; microfabrication technique; transport property; Dielectrophoresis; Educational institutions; FETs; Fabrication; Gallium nitride; III-V semiconductor materials; Light emitting diodes; Light scattering; Nanobioscience; Nanoscale devices;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422513
