Mechanically strained laser crystallized poly-silicon thin film transistors and ring oscillators fabricated on stainless steel foils

In this study we evaluated NMOS and PMOS laser crystallized poly-silicon thin- film transistors (TFTs) as well as ring oscillators on stainless steel foil substrate under tensile strain. We also evaluated poly silicon TFTs with channels oriented perpendicular to the direction of applied strain. We observed that the mobility of both NMOS and PMOS devices decreased when the strain level increased while threshold voltage and subthreshold slope stayed unchanged.