DocumentCode
2661385
Title
Erbium-Doped Silicon-Rich Oxide Waveguides
Author
Clement, T.J. ; DeCorby, R.G. ; Ponnampalam, N. ; Allen, T.W. ; Hryeiw, A. ; Meldrum, A.
Author_Institution
Dept. of Electr. & Comput. Eng., Alberta Univ., Edmonton, Alta.
fYear
2006
fDate
13-15 Sept. 2006
Firstpage
49
Lastpage
51
Abstract
We have fabricated and characterized strip waveguides based on an erbium-doped silicon-rich oxide (~SiO) core layer. Efficient non-resonant excitation of the erbium was observed under transverse pumping. However, carrier-induced losses greatly exceed erbium-related gain
Keywords
erbium; optical fabrication; optical waveguides; silicon compounds; SiO:Er; carrier-induced losses; erbium-doped silicon-rich oxide waveguides; erbium-related gain; nonresonant excitation; transverse pumping; Absorption; Amorphous materials; Annealing; Erbium; Luminescence; Magnetic confinement; Magnetic materials; Physics; Silicon; Sputtering;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics, 2006. 3rd IEEE International Conference on
Conference_Location
Ottawa, Ont.
Print_ISBN
1-4244-0096-1
Type
conf
DOI
10.1109/GROUP4.2006.1708161
Filename
1708161
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