Title :
Implementation and study of photovoltaic cells based on InP lattice-matched InGaAs and InGaAsP
Author :
Emziane, Mahieddine ; Tuley, Richard ; Nicholas, Robin J. ; Rogers, Dave C. ; Cannard, Paul J. ; Dosanjh, Jeevan
Author_Institution :
Univ. of Oxford, Oxford
Abstract :
In a recent paper, we have shown that optimum device performance can be achieved by using relatively thin structures and moderate doping concentrations in InGaAs(P) photovoltaic (PV) cells. We report in this paper the implementation and assessment of single-junction InGaAs and InGaAsP PV cells lattice-matched to InP. Three bandgaps (0.74, 1.0 and 1.2 eV) and both n/p and p/n structure configurations have been studied.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; photovoltaic cells; InGaAsP; bandgaps; photovoltaic cells; structure configurations; Current density; Doping; Educational institutions; Indium gallium arsenide; Indium phosphide; Laboratories; Lighting; Photonic band gap; Photovoltaic cells; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422526
