Title :
Characterization of scaled MANOS nonvolatile semiconductor memory (NVSM) devices
Author :
Wang, Gan ; Eichenlaub, Nathan ; Zhang, Yanli ; White, Marvin H.
Author_Institution :
Lehigh Univ., Sherman
Abstract :
In this paper, the authors have fabricated MANOS NVSM devices with high-k Al2O3 as the blocking oxide, which demonstrate good speed, 10-year retention, and endurance performance for future low voltage operation and improved NVSM array efficiency.
Keywords :
alumina; random-access storage; semiconductor storage; Al2O3; MANOS NVSM devices; MANOS nonvolatile semiconductor memory devices; blocking oxide; metal-Al2O3-nitride-oxide-Si NVSM device; Aluminum oxide; High K dielectric materials; High-K gate dielectrics; Low voltage; Nonvolatile memory; SONOS devices; Semiconductor memory; Solid state circuits; Threshold voltage; Tunneling;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422527
