• DocumentCode
    2661465
  • Title

    Ge/Si hetero-nanocrystal MOSFET memories

  • Author

    Liu, Jianlin ; Li, Bei

  • Author_Institution
    Univ. of California, Riverside
  • fYear
    2007
  • fDate
    12-14 Dec. 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    MOSFET memory devices with Ge/Si HNCs (hetero-nanocrystal) floating gate were fabricated. A superior performance was demonstrated, including larger storage capability, longer retention time, and faster programming speed, which makes Ge/Si HNCs memories promising candidate to replace Si NCs memories.
  • Keywords
    MOSFET circuits; germanium; integrated memory circuits; nanostructured materials; nanotechnology; silicon; Ge-Si; MOSFET memory; hetero-nanocrystal floating gate; memory devices; Atomic force microscopy; Educational institutions; Germanium; Hetero-nanocrystal memory; Logic circuits; Low voltage; MOSFET circuits; Nanocrystals; Nonvolatile memory; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2007 International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-1892-3
  • Electronic_ISBN
    978-1-4244-1892-3
  • Type

    conf

  • DOI
    10.1109/ISDRS.2007.4422529
  • Filename
    4422529
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2661465