Title :
A high voltage PMOS transistor for quenching of geiger-mode avalanche photodiodes in deep submicron CMOS technologies
Author :
Marwick, Miriam Adlerstein ; Andreou, Andreas G.
Author_Institution :
Johns Hopkins Univ., Hopkins
Abstract :
In this work, we present a quenching transistor with a high voltage tolerance at the drain designed to allow for safe operation of a single-photon-counting avalanche photodiode fabricated in the TSMC 0.18 mum, 1.8 V process.
Keywords :
CMOS integrated circuits; avalanche photodiodes; integrated circuit design; Geiger-mode avalanche photodiodes; PMOS transistor; deep submicron CMOS technology; quenching transistor; size 0.18 mum; voltage 1.8 V; Avalanche photodiodes; Breakdown voltage; CMOS process; CMOS technology; Circuits; Doping; Educational institutions; Isolation technology; MOSFETs; Paper technology;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422531
