Low energy SIMOX (LES)

Author

Namavar, F. ; Cortesi, E. ; Buchanan, B. ; Sioshansi, P.

Author_Institution

Spire Corp., Bedford, MA, USA

fYear

1989

fDate

3-5 Oct 1989

Firstpage

117

Lastpage

118

Abstract

Results and mechanisms involved in producing high-quality separation by implantation of oxygen (SIMOX) material at low energy (30-80 keV) are presented and discussed in detail. The theoretical advantages of using low-energy implantation are derived and verified. Some of these advantages are: (1) a continuous oxide layer can be formed with a smaller dose, resulting in a faster and more economical SIMOX process; (2) introduction of contaminants is reduced because of reduced implantation time; and (3) the process is viable over a much wider range of implantation facilities. This process should have a great impact on production of SOI for military and commercial purposes not only because of reduced cost due to reducing implantation time by an order of magnitude, but also because it provides a means to produce SIMOX structures with an ultrathin SiO₂ layer

Keywords

ion implantation; semiconductor technology; semiconductor-insulator boundaries; 30 to 80 keV; Si-SiO₂; contamination reduction; economical SIMOX process; high quality SIMOX material; high-quality separation by implantation; low energy SIMOX; low-energy implantation; reduced cost; reduced implantation time; smaller dose; ultrathin SiO₂ layer; wider range of implantation facilities; Annealing; Contracts; Costs; Fabrication; Oxygen; Paramagnetic resonance; Power generation economics; Production; Silicon; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

SOS/SOI Technology Conference, 1989., 1989 IEEE

Conference_Location

Stateline, NV

Type

conf

DOI

10.1109/SOI.1989.69794

Filename

69794