• DocumentCode
    2661626
  • Title

    Characterization of latch-up in CMOS inverters in pulsed electromagnetic interference environments

  • Author

    Kim, Kyechong ; Iliadis, Agis A.

  • Author_Institution
    Univ. of Maryland, College Park
  • fYear
    2007
  • fDate
    12-14 Dec. 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Latch-up effects in cascaded CMOS inverters due to pulsed electromagnetic interference (PEMI) from high power microwave sources, is reported. The cascaded inverters were designed and fabricated consisting of two identical inverters with a width to length ratio (W/L) of 3.2 mum/1.6 mum for n MOSFETs and 9.6 mum/1.6mum for p MOSFETs. The inverters were packaged and placed in a PC board for measurements.
  • Keywords
    CMOS integrated circuits; MOSFET; electromagnetic interference; invertors; MOSFET; PC board; cascaded CMOS inverters; latch-up; power microwave sources; pulsed electromagnetic interference; EMP radiation effects; Electromagnetic interference; Frequency; Microwave devices; Microwave measurements; Pulse amplifiers; Pulse generation; Pulse inverters; Pulse measurements; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2007 International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-1892-3
  • Electronic_ISBN
    978-1-4244-1892-3
  • Type

    conf

  • DOI
    10.1109/ISDRS.2007.4422538
  • Filename
    4422538
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2661626