Fabrication of High Quality AlGaSb/AlSb-distributed Bragg Reflectors on Si

Author

Akahane, K. ; Yamamoto, N. ; Gozu, S. ; Ueta, A. ; Tsuchiya, M.

Author_Institution

Nat. Inst. of Inf. & Commun. Technol., Tokyo

fYear

2006

fDate

13-15 Sept. 2006

Firstpage

93

Lastpage

95

Abstract

We fabricated AlGaSb/AlSb-distributed Bragg reflectors (DBRs) on Si(001) substrates. The use of an AlSb initiation layer enabled us to fabricate high-quality AlGaSb/AlSb films on the Si substrates. A well-defined AlGaSb/AlSb-DBR structure was observed using a scanning electron microscope. A stop band of 100 nm centered at 1500 nm was observed using a Fourier transform infrared spectrometer

Keywords

Fourier transform spectra; III-V semiconductors; aluminium compounds; antimony compounds; distributed Bragg reflectors; gallium compounds; infrared spectra; integrated optics; optical fabrication; scanning electron microscopy; semiconductor thin films; 100 nm; 1500 nm; AlGaSb-AlSb; DBR; Fourier transform infrared spectrometer; Si; high quality distributed Bragg reflectors fabrication; scanning electron microscope; Distributed Bragg reflectors; Fabrication; Fourier transforms; Infrared spectra; Optical films; Scanning electron microscopy; Semiconductor films; Spectroscopy; Substrates; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Group IV Photonics, 2006. 3rd IEEE International Conference on

Conference_Location

Ottawa, Ont.

Print_ISBN

1-4244-0096-1

Type

conf

DOI

10.1109/GROUP4.2006.1708176

Filename

1708176