Temperature-Dependent Carrier Recombination Processes in Nanocrystalline Si/SiO2 Multi-Layers Studied by Time-Resolved and Time-Integrated Photoluminescence

Author

Suk-Ho Choi ; Sung Kim ; Yong Min Park ; Kyung Joong Kim

Author_Institution

Dept. of Phys. & Appl. Phys., Kyung Hee Univ., Yongin

fYear

2006

fDate

13-15 Sept. 2006

Firstpage

96

Lastpage

98

Abstract

In this study, ion beam sputtering deposition (IBSD) has been used to fabricate 50-period SiO₂/SiO_x multilayers, which have been subsequently annealed to form Si nanocrystals (NCs) in the SiO_x layer. We report interesting correlation of temperature-dependent integrated PL intensity with the PL lifetime at each x value (NC size) and discuss possible mechanisms to explain the experimental results

Keywords

annealing; electron-hole recombination; elemental semiconductors; ion beam assisted deposition; nanostructured materials; nanotechnology; optical multilayers; photoluminescence; silicon; silicon compounds; sputter deposition; PL lifetime; Si nanocrystalline multilayers fabrication; Si-SiO₂; annealing; ion beam sputtering deposition; temperature-dependent carrier recombination processes; time-integrated photoluminescence; time-resolved photoluminescence; Ion beams; Laser excitation; Nanocrystals; Nonhomogeneous media; Optical pulses; Photoluminescence; Physics; Pump lasers; Temperature dependence; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Group IV Photonics, 2006. 3rd IEEE International Conference on

Conference_Location

Ottawa, Ont.

Print_ISBN

1-4244-0096-1

Type

conf

DOI

10.1109/GROUP4.2006.1708177

Filename

1708177