DocumentCode :
2661702
Title :
Temperature-Dependent Carrier Recombination Processes in Nanocrystalline Si/SiO2 Multi-Layers Studied by Time-Resolved and Time-Integrated Photoluminescence
Author :
Suk-Ho Choi ; Sung Kim ; Yong Min Park ; Kyung Joong Kim
Author_Institution :
Dept. of Phys. & Appl. Phys., Kyung Hee Univ., Yongin
fYear :
2006
fDate :
13-15 Sept. 2006
Firstpage :
96
Lastpage :
98
Abstract :
In this study, ion beam sputtering deposition (IBSD) has been used to fabricate 50-period SiO2/SiOx multilayers, which have been subsequently annealed to form Si nanocrystals (NCs) in the SiOx layer. We report interesting correlation of temperature-dependent integrated PL intensity with the PL lifetime at each x value (NC size) and discuss possible mechanisms to explain the experimental results
Keywords :
annealing; electron-hole recombination; elemental semiconductors; ion beam assisted deposition; nanostructured materials; nanotechnology; optical multilayers; photoluminescence; silicon; silicon compounds; sputter deposition; PL lifetime; Si nanocrystalline multilayers fabrication; Si-SiO2; annealing; ion beam sputtering deposition; temperature-dependent carrier recombination processes; time-integrated photoluminescence; time-resolved photoluminescence; Ion beams; Laser excitation; Nanocrystals; Nonhomogeneous media; Optical pulses; Photoluminescence; Physics; Pump lasers; Temperature dependence; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics, 2006. 3rd IEEE International Conference on
Conference_Location :
Ottawa, Ont.
Print_ISBN :
1-4244-0096-1
Type :
conf
DOI :
10.1109/GROUP4.2006.1708177
Filename :
1708177
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2661702
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