Simultaneous two-color Infrared detectors based on MBE-grown HgCdTe heterostructures

We present here a two-color IR detector technology based on HgCdTe heterostructures grown by molecular beam epitaxy (MBE). Increased uniformity in composition, doping, thickness and defect minimization is achieved relative to the current state of the art through the use of high precision growth and in-situ characterization techniques. Our detector architecture is vertically integrated, leading to a stacked structure with the capability to simultaneously detect in two spectral bands that can easily be tuned by simply adjusting the MBE cell temperatures. The proposed technology is scalable, having the potential to expand toward large focal plane arrays.