Two-dimensional analytical modeling and simulation of retrograde doped HMG MOSFET

Author

Gupta, R.S. ; Goel, Kirti ; Gupta, Mridula ; Saxena, Manoj

Author_Institution

Dept. of Electron. Sci., Delhi Univ., New Delhi, India

fYear

2004

fDate

4-6 Aug. 2004

Firstpage

52

Lastpage

59

Abstract

A novel device architecture, retrograde doped HMG (hetero-material gate) MOSFET is presented which combines the advantages of an epitaxial layer in the channel region with the HMG MOSFET. This combination tackles the problems of short channel effects (SCEs), hot electron effects and gate transport efficiency in a single structure by reducing threshold voltage and modifying the electric field pattern and surface potential profile along the channel. The expression for the 2D potential profile in the channel has been derived. The results of surface potential, electric field and threshold voltage have been plotted and compared with their corresponding simulated results.

Keywords

MOSFET; epitaxial layers; hot carriers; semiconductor device models; surface potential; 2D analytical modeling; channel region; electric field pattern; epitaxial layer; gate transport efficiency; hetero-material gate MOSFET; hot electron effects; retrograde doped MOSFET; short channel effects; surface potential profile; threshold voltage; Analytical models; Educational institutions; Electric potential; Electrons; Inorganic materials; Laboratories; MOSFET circuits; Poisson equations; Semiconductor devices; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Devices, 2004. Proceedings. IEEE Lester Eastman Conference on

Print_ISBN

981-256-196-X

Type

conf

DOI

10.1109/LECHPD.2004.1549671

Filename

1549671