Title :
Numerical investigate of base doping for minimum base transit time
Author :
Rahmani, Abolfazl ; Seryasat, Omid ; Hosseini, S.E.
Author_Institution :
Eng. Dept., Sabzevar Tarbiat Moallem Univ., Sabzevar, Iran
Abstract :
In this paper numerical optimum base doping for minimum base transit time is presented. The bandgap-narrowing effect, high-injection effect, and carrier velocity saturation at the base edge of the base collector junction, and also doping and field dependence of mobility, are considered. Many doping profile are investigated including, linear, exponential doping concentration, we assumed uniform, exponentially and Gaussian doping profiles. Base transit time is investigated numerically for optimum base doping profile.
Keywords :
bipolar transistors; doping profiles; semiconductor doping; Gaussian doping profile; bandgap-narrowing effect; base collector junction; bipolar junction transistor; carrier velocity saturation; exponential doping concentration; high-injection effect; linear doping concentration; minimum base transit time; mobility field dependence; numerical optimum base doping; Analytical models; Current density; Doping profiles; Junctions; Niobium; Transistors; Base transit time; bipolar junction transistors; high injection;
Conference_Titel :
Software Technology and Engineering (ICSTE), 2010 2nd International Conference on
Conference_Location :
San Juan, PR
Print_ISBN :
978-1-4244-8667-0
Electronic_ISBN :
978-1-4244-8666-3
DOI :
10.1109/ICSTE.2010.5608777
