• DocumentCode
    2661784
  • Title

    Sub-ns Dynamics of nc-Si QDs in SiNx Matrix Grown by PECVD

  • Author

    Jae-Heon Shin ; Cho, K.S. ; Huh, C. ; Kim, K.H. ; Hong, J. ; Sung, G.Y. ; Chang, Y.D. ; Lee, D.H. ; Yong Jai Cho

  • Author_Institution
    Electron. & Telecommun. Res. Inst., Daejeon
  • fYear
    2006
  • fDate
    13-15 Sept. 2006
  • Firstpage
    110
  • Lastpage
    112
  • Abstract
    Time-resolved PL characteristic of the nc-Si QDs in SiNx matrix grown by PECVD is studied. The measured PL lifetime of nc-Si QDs is about 0.43 ns
  • Keywords
    elemental semiconductors; photoluminescence; plasma CVD; semiconductor growth; semiconductor quantum dots; silicon; silicon compounds; PECVD; PL lifetime; Si; SiNx; nc-Si QD growth; subns QD dynamics; time-resolved PL characteristics; Laser excitation; Nanocrystals; Photonic band gap; Physics; Plasma temperature; Quantum dot lasers; Radiative recombination; Silicon compounds; Telecommunication standards; Wavelength measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics, 2006. 3rd IEEE International Conference on
  • Conference_Location
    Ottawa, Ont.
  • Print_ISBN
    1-4244-0096-1
  • Type

    conf

  • DOI
    10.1109/GROUP4.2006.1708182
  • Filename
    1708182
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2661784