Low-Capacitance Integrated Silicon Finger Photodetector

Author

Gaberl, W. ; Zimmermann, H.

Author_Institution

Inst. of Electr. Meas. & Circuit Design, Vienna Univ. of Technol.

fYear

2006

fDate

13-15 Sept. 2006

Firstpage

122

Lastpage

124

Abstract

Results of a low capacitance design for integrated silicon photodiodes are presented. The diodes use n⁺-doped finger cathodes as well as p⁺-fingers. With this design it is possible to lower the capacitance compared to homogenous photodiodes (vertical PIN photodiode structure). Low capacitances are reached even at low bias voltages of around 2 V. The diodes reach a responsivity of R=0.24A/W (0.45A/W) at a wavelength of 410 nm (660 nm). The diode design aims at applications where maximum sensitivity, i.e. lowest noise, and therefore low photodiode capacitance is needed. The photodiodes were realized in a 0.6mum BiCMOS process

Keywords

BiCMOS integrated circuits; integrated optoelectronics; p-i-n photodiodes; photodetectors; 0.6 micron; 410 nm; BiCMOS process; PIN-technology; integrated optoelectronics; low-capacitance integrated silicon photodiodes; n⁺-doped finger cathodes; p⁺-doped finger cathodes; photodetectors; Capacitance; Diodes; Fingers; Optical amplifiers; Optical noise; Optical receivers; Optical sensors; Photodetectors; Photodiodes; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Group IV Photonics, 2006. 3rd IEEE International Conference on

Conference_Location

Ottawa, Ont.

Print_ISBN

1-4244-0096-1

Type

conf

DOI

10.1109/GROUP4.2006.1708186

Filename

1708186