• DocumentCode
    2661874
  • Title

    Near-infrared Electroluminescence from Multilayered CdF2/CaF2 Quantum Heterostructure Grown on Trench-Patterned Si

  • Author

    Jinen, K. ; Uchida, Kazunori ; Kodaira, Shuichi ; Watanabe, Manabu ; Asada, Minoru

  • Author_Institution
    Dept. of Electron. & Appl. Phys., Tokyo Inst. of Tech., Kanagawa
  • fYear
    2006
  • fDate
    13-15 Sept. 2006
  • Firstpage
    128
  • Lastpage
    130
  • Abstract
    A CdF2/CaF2 intersubband transition light-emitting structure is fabricated on a trench-patterned Si substrate. Electroluminescence from the device was observed in the near-infrared region
  • Keywords
    cadmium compounds; electroluminescence; elemental semiconductors; light emitting devices; semiconductor heterojunctions; semiconductor materials; semiconductor superlattices; silicon; CdF2-CaF2; LED; Si; intersubband transition light-emitting structure; multilayered quantum heterostructure; near-infrared electroluminescence; superlattices; trench-patterned silicon(111) substrate; Annealing; Electrodes; Electroluminescence; Lattices; Light emitting diodes; Quantum cascade lasers; Quantum well lasers; Semiconductor lasers; Substrates; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics, 2006. 3rd IEEE International Conference on
  • Conference_Location
    Ottawa, Ont.
  • Print_ISBN
    1-4244-0096-1
  • Type

    conf

  • DOI
    10.1109/GROUP4.2006.1708188
  • Filename
    1708188
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2661874