• DocumentCode
    2661941
  • Title

    Dynamic intrinsic chip ID using 32nm high-K/metal gate SOI embedded DRAM

  • Author

    Fainstein, Daniel ; Rosenblatt, Sami ; Cestero, Alberto ; Robson, Norman ; Kirihata, Toshiaki ; Iyer, Subramanian S.

  • Author_Institution
    IBM Syst. & Technol. Group, Hopewell Junction, NY, USA
  • fYear
    2012
  • fDate
    13-15 June 2012
  • Firstpage
    146
  • Lastpage
    147
  • Abstract
    A random intrinsic chip ID method generates a pair of 4Kb binary strings using retention fails in 32nm SOI embedded DRAM. Hardware results show ID overlap distance mean=0.58 and σ=0.76 and demonstrate 100% authentication for 346 chips. The analytical model predicts >; 99.999% unique IDs for 106 parts.
  • Keywords
    DRAM chips; high-k dielectric thin films; identification; silicon-on-insulator; RICID; Retention based Intrinsic Chip ID; binary string; chip identification; dynamic intrinsic chip ID; high-K-metal gate SOI embedded DRAM; random intrinsic chip ID method; size 32 nm; storage capacity 4 Kbit; Analytical models; Arrays; Authentication; Hardware; Logic gates; Metals; Random access memory; HKMG; Intrinsic ID; Security; embedded DRAM;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Circuits (VLSIC), 2012 Symposium on
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    978-1-4673-0848-9
  • Electronic_ISBN
    978-1-4673-0845-8
  • Type

    conf

  • DOI
    10.1109/VLSIC.2012.6243832
  • Filename
    6243832
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2661941