Low frequency noise parameters in an AlGaN/GaN heterostructure with 33% and 75% Al mole fraction

Transport and low frequency noise properties of undoped AlGaN/GaN high electron mobility transistor (HEMT) heterostructures with 33% and 75% Al mole fractions in the ohmic and nonlinear regimes of applied voltages are studied. In contrast to the low Al mole fraction, the noise properties of 75% content structures are not affected by passivation. At small voltages both kinds of structures demonstrate about the same level of 1/f excess noise. Deviations from conventional flicker noise were observed at high applied voltages. Additionally, differences in noise behaviour between the two structures were revealed. In the 75% content structures, a noise level suppression was registered in the non-linear regime, which is important for the development of low noise oscillator circuits.